Indium ( /ˈɪndiəm/ IN-dee-əm) is a chemical element with chemical symbol In
and atomic number 49. This rare, very soft, malleable and easily
fusible post-transition metal is chemically similar to aluminium. Indium
was discovered in 1863 and named for the indigo blue line in its
spectrum that was the first indication of its existence in zinc ores,
as a new and unknown element. The metal was first isolated in the
following year. Zinc ores continue to be the primary source of indium,
where it is found in compound form. Very rarely the element can be
found as grains of native (free) metal, but these are not of commercial
importance.


Indium's current primary application is to form
transparent electrodes from indium tin oxide in liquid crystal displays
and touchscreens, and this use largely determines its global mining
production. It is widely used in thin-films to form lubricated layers
(during World War II it was widely used to coat bearings in
high-performance aircraft). It is also used for making particularly low
melting point alloys, and is a component in some lead-free solders.


Indium
is not known to be used by any organism. In a similar way to aluminum
salts, indium (III) ions can be toxic to the kidney when given by
injection, but oral indium compounds do not have the chronic toxicity
of salts of heavy metals, probably due to poor absorption in basic
conditions. Radioactive indium-111 (in very small amounts on a chemical
basis) is used in nuclear medicine tests, as a radiotracer to follow
the movement of labeled proteins and white blood cells in the body.


 


 


Contents


[hide]



  • 1 Characteristics

  • 2 Isotopes

  • 3 Creation

  • 4 History

  • 5 Occurrence and consumption

    • 5.1 Resources

    • 5.2 Production



  • 6 Applications

    • 6.1 Electronics

    • 6.2 Metal and alloys

    • 6.3 Other uses



  • 7 Precautions

  • 8 See also

  • 9 References

  • 10 External links


[edit] Characteristics


 


 


 


 


Indium wetting the glass surface of a test tube


Indium
is a very soft, silvery-white, relatively rare true metal with a bright
luster. As a pure metal, indium emits a high-pitched "cry", when it is
bent.[2] Both gallium and indium are able to wet glass. A number of
standard electrode potentials, depending on the reaction under study,[3]
is reported for indium:


- 0.40 In2+ + e− ↔ In+


 


 


- 0.49 In3+ + e− ↔ In2+


 


 


- 0.40 In2+ + 3 e− ↔ In+


 


 


- 0.338 In3+ + 3 e− ↔ Ino


Unlike its period 5 neighbor cadmium, indium is not a cumulative poison.


Indium
demonstrates the inert pair effect to a limited extent, forming some In
(I) compounds such as Indium(I) bromide. The most stable oxidation
state for indium, however, is still (III). Unlike the corresponding
thallium compounds, indium (I) compounds are not stable in water.


[edit] Isotopes


Main article: Isotopes of indium


Indium
in nature consists of two primordial nuclides. One unusual property of
indium (shared only with rhenium) is that although it possesses a stable
isotope, its most common (abundant) isotope (95.7%) is slightly and
measurably radioactive. This isotope, indium-115 very slowly decays by
beta emission to tin. This decay has a half-life of 4.41×1014 years,
four orders of magnitude larger than the age of the universe and nearly
50,000 times longer than that of natural thorium.[4]


[edit] Creation


Indium
is created via the long S-process in low-medium mass stars (.6 -> 10
solar masses). This takes thousands of years to do. It requires a
cadmium atom to capture sufficient neutrons and then undergo Beta decay.


[edit] History


In
1863 the German chemists Ferdinand Reich and Hieronymous Theodor
Richter were testing ores from the mines around Freiberg, Saxony. They
dissolved the minerals pyrite, arsenopyrite, galena and sphalerite in
hydrochloric acid and distilled the raw zinc chloride. As it was known
that ores from that region sometimes contain thallium they searched for
the green emission lines with spectroscopic methods. The green lines
were absent but a blue line was present in the spectrum. As no element
was known with a bright blue emission they concluded that a new element
was present in the minerals. They named the element with the blue
spectral line indium, from the indigo color seen in its spectrum.[5][6]
Richter went on to isolate the metal in 1864.[7] At the World Fair 1867
an ingot of 0.5 kg (1.1 lb) was presented.[8]


[edit] Occurrence and consumption


Indium
ranks 61st in abundance in the Earth's crust at approximately 0.25
ppm,[9] which means it is more than three times as abundant as silver,
which occurs at 0.075 ppm.[10] Fewer than 10 indium minerals are known,
none occurring in significant deposits. Examples are the dzhalindite
(In(OH)3) and indite (FeIn2S4).[11]


[edit] Resources


Based
on content of indium in zinc ore stocks, there is a worldwide reserve
base of approximately 6,000 tonnes of economically viable indium.[12]
This figure has led to estimates suggesting that, at current consumption
rates, there is only 13 years' supply of indium left.[13] However, the
Indium Corporation, the largest processor of indium, claims that, on
the basis of increasing recovery yields during extraction, recovery
from a wider range of base metals (including tin, copper and other
polymetallic deposits) and new mining investments, the long-term supply
of indium is sustainable, reliable and sufficient to meet increasing
future demands.[14]


This conclusion also seems reasonable in light
of the fact that silver, three times less abundant than indium in the
earths crust,[15] is currently mined at approximately 18,300 tonnes per
annum,[16] which is 40 times greater than current indium mining rates.


[edit] Production


The
lack of indium mineral deposits and the fact that indium is enriched in
sulfidic lead, tin, copper, iron and predominately in zinc deposits,
makes zinc production the main source for indium. The indium is leached
from slag and dust of zinc production. Further purification is done by
electrolysis.[8]


Indium is produced mainly from residues
generated during zinc ore processing but is also found in iron, lead,
and copper ores.[2] Canada is a leading producer of indium. The Teck
Cominco refinery in Trail, British Columbia, is the largest single
source indium producer, with production of 32,500 kg in 2005, 41,800 kg
in 2004 and 36,100 kg in 2003. South American Silver's Malku Khota
property in Bolivia is the largest resource of indium with an indicated
resource of 845,000 kg and inferred resource of 968,000 kg.Adex Mining
Inc.’s Mount Pleasant Mine in New Brunswick, Canada, holds about 15 to
20% of the world’s total known indium resources.[17]


The amount of
indium consumed is largely a function of worldwide LCD production.
Worldwide production is currently 476 tonnes per year from mining and a
further 650 tonnes per year from recycling.[14] Demand has risen
rapidly in recent years with the popularity of LCD computer monitors
and television sets, which now account for 50% of indium
consumption.[18] Increased manufacturing efficiency and recycling
(especially in Japan) maintain a balance between demand and supply.
Demand increased as the metal is used in LCDs and televisions, and
supply decreased when a number of Chinese mining concerns stopped
extracting indium from their zinc tailings. In 2002, the price was US$94
per kilogram. The recent changes in demand and supply have resulted in
high and fluctuating prices of indium, which from 2005 to 2007 ranged
from US$700/kg to US$1,000/kg.[12] Demand for indium may increase with
large-scale manufacture of CIGS-based thin film solar technology
starting by several companies in 2008, including Nanosolar and Miasole.


[edit] Applications


 


 


 


 


A magnified image of an LCD screen showing RGB pixels. Individual transistors are seen as white dots in the bottom part.


The
first large-scale application for indium was as a coating for bearings
in high-performance aircraft engines during World War II. Afterward,
production gradually increased as new uses were found in fusible alloys,
solders, and electronics. In the 1950s, tiny beads of it were used for
the emitters and collectors of PNP alloy junction transistors. In the
middle and late 1980s, the development of indium phosphide
semiconductors and indium tin oxide thin films for liquid crystal
displays (LCD) aroused much interest. By 1992, the thin-film application
had become the largest end use.[19][20]


[edit] Electronics



  • Indium
    oxide (In2O3) and indium tin oxide (ITO) are used as a transparent
    conductive coating applied to glass substrates in the making of
    electroluminescent panels.

  • Some indium compounds such as indium
    antimonide, indium phosphide,[21] and indium nitride[22] are
    semiconductors with useful properties.

  • Indium is used in the
    synthesis of the semiconductor copper indium gallium selenide (CIGS),
    which is used for the manufacture of thin film solar cells.[23]

  • Used
    in light-emitting diodes (LEDs) and laser diodes based on compound
    semiconductors such as InGaN, InGaP that are fabricated by Metalorganic
    Vapor Phase Epitaxy (MOVPE) technology.

  • The ultrapure
    metalorganics of indium, specifically high purity trimethylindium (TMI)
    is used as a precursor in III-V compound semiconductors, while it is
    also used as the semiconductor dopant in II-VI compound
    semiconductors.[24]

  • As one of many substitutes for mercury in
    alkaline batteries to prevent the zinc from corroding and releasing
    hydrogen gas (e.g., US Pat US5188869)


[edit] Metal and alloys


 


 


 


 


Ductile indium wire



  • Very
    small amounts used in aluminium alloy sacrificial anodes (for salt
    water applications) to prevent passivation of the aluminium.

  • To
    bond gold electrical test leads to superconductors, indium is used as a
    conducting glue and applied under a microscope with precision tweezers.

  • In
    the form of a wire it is used as a vacuum seal and a thermal conductor
    in cryogenics and ultra-high vacuum applications. For example, in
    manufacturing gaskets which deform to fill gaps.[25]

  • Used as a calibration material for Differential scanning calorimetry.

  • It is an ingredient in the alloy Galinstan, which is liquid at room temperature while not being toxic like mercury.


[edit] Other uses



  • Indium
    tin oxide is used as a light filter in low pressure sodium vapor lamps.
    The infrared radiation is reflected back into the lamp, which
    increases the temperature within the tube and therefore improves the
    performance of the lamp.[20]

  • Indium's melting point of 429.7485 K (156.5985 °C) is a defining fixed point on the international temperature scale ITS-90.

  • Indium's
    high neutron capture cross section for thermal neutrons makes it
    suitable for use in control rods for nuclear reactors, typically in an
    alloy containing 80% silver, 15% indium, and 5% cadmium.

  • In nuclear engineering, the (n,n') reactions of 113In and 115In are used to determine magnitudes of neutron fluxes.

  • Indium
    is also used as a thermal interface material by personal computer
    enthusiasts in the form of pre-shaped foil sheets fitted between the
    heat-transfer surface of a microprocessor and its heat sink. The
    application of heat partially melts the foil and allows the indium
    metal to fill in any microscopic gaps and pits between the two surfaces,
    removing any insulating air pockets that would otherwise compromise
    heat transfer efficiency.

  • 111In emits gamma radiation and is
    used in indium leukocyte imaging, or indium scintigraphy, a technique of
    medical imaging. Indium leukocyte scintigraphy has many applications,
    including early phase drug development, and the monitoring of activity
    of white blood cells. For the test, blood is taken from the patient,
    white cells removed, labeled with the radioactive 111In, then
    re-injected back into the patient. Gamma imaging will then reveal any
    areas of on-going white cell localization such as new and developing
    areas of infection.


[edit] Precautions


Pure
indium in metal form is considered non-toxic by most sources. In the
welding and semiconductor industries, where indium exposure is
relatively high, there have been no reports of any toxic side-effects.


Indium
compounds, like aluminum compounds, complex with hydroxyls to form
insoluble salts in basic conditions, and are thus not well-absorbed
from food, giving them fairly low oral toxicty. Soluble indium (III) is
toxic when delivered parenterally, however, causing damage primarily
to the kidney (both inner and outer parts). Other indium compounds are
toxic when administered outside the GI tract: for example, anhydrous
indium trichloride (InCl3) and indium phosphide (InP) are quite toxic
when delivered into the lungs (the latter is a suspected carcinogen).[


 


引用出處: 


 http://en.wikipedia.org/wiki/Indium


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镓是银白色金
属。密度5.904克/厘米3。熔点29.78℃。沸点2403℃。化合价2和3。第一电离能5.999电子伏特。凝固点很低。由于稳定固体的复杂结构,
纯液体有显著的过冷的趋势,可以放在冰浴内几天不结晶。质软、性脆,在空气中表现稳定。加热可溶于酸和碱;与沸水反应剧烈,但在室温时仅与水略有反应。高
温时能与大多数金属作用。由液态转化为固态时,膨胀率为3.1%,宜存放于塑料容器中。


纠错 编辑摘要


目录



  • 1 概述

  • 2 理化性质

  • 3 综合性质

  • 4 发现

  • 5 来源及用途


  •  





  • 1 概述

  • 2 理化性质

  • 3 综合性质

  • 4 发现

  • 5 来源及用途

  • 6 高纯镓

  • 7 硝酸镓

  • 8 磷酸镓

  • 9 氧化镓

  • 10 提炼

  • 11 参考资料



 


高纯镓


 


 


镓 - 概述



是元素周期表第四周期ⅢA族元素,元素符号Ga,原子序数31,原子量69.723。1875年法国化学家布瓦博德朗在闪锌矿中离析出几克性质与门捷列夫
预言的“类铝”相同的元素,并命名。元素名来源于他的祖国,愿意为“法国的”。镓是化学史上第一个先从理论预言,后在自然界中被发现验证的化学元素。镓在
地壳中的含量约0.001%,含量最富的锗石中也只含0.5%左右。固体镓为蓝灰色,液体镓为银白色;熔点29.78°C,沸点2403°C,固体密度
5.907克/厘米³。镓与钒、铌、锆形成的合金具有超导性。


 


镓 - 理化性质


 



属镓固态为淡蓝色,液态呈银白色,熔点29.93`C,沸点2403`C,密度5.9g电阻率27x10-8fI•m,液态镓的蒸气压很
低,1350℃时仅为133.3Pa,在所有元素中,镓的液态温度范围最宽(从29.93-2403'C),由于固态镓的结构复杂,液态镓易出现过冷现
象,在快速冷却时,液体镓可以在一40℃的过冷状态下仍保持液态。液态镓转为固态时,镓体积膨胀,膨胀率达3.2%,液态镓几乎能润湿所有物质的表面,具
有优良的浇注性能,镓能迅速扩散到某些金属的晶格内,在高温下能和许多金属生成合金。


镓的外电子层构型为「Ar]3d104s2p1,
有+1--+3三种价态,其中以+3价化合物最稳定。镓在常温空气中稳定,260℃时才开始和氧作
用,100℃时钵不和水作用,但200℃时高压水蒸气会氧化镓生成氢氧化镓。镓的化学性质和锌、铝相似,属于两性元素。和铝相似,既能溶于酸,又能溶于
碱。镓的化学活性和锌相近,但不如铝活泼。镓缓慢溶于硫酸和盐酸中,室温下不溶于硝酸,但溶于热的硝酸、高氯酸、氢氟酸和王水中。随纯度提高,镓在酸和碱
中溶解速度变慢,镓能和卤素作用生成各种卤化物,和硫、硒、磷、砷、锑生成半导体性质的化合物,金属镓腐蚀很强,镓对人体无害,是一种安全金属。


 


镓 - 综合性质


 


元素名称:镓


元素原子量:69.72


元素类型:金属


原子体积:(立方厘米/摩尔):11.8


高纯三甲基镓


 


地壳中含量:(ppm):18


元素在太阳中的含量:(ppm):0.04


元素在海水中的含量:(ppm):  0.00001


 


发现人:布瓦博德朗    发现年代:1875年


原子序数:31


元素符号:Ga


元素英文名称:Gallium


相对原子质量:69.72


核内质子数:31


核外电子数:31


核电核数:31


质子质量:5.1863E-26


质子相对质量:31.217


所属周期:4


所属族数:IIIA


摩尔质量:70


氢化物:GaH3


氧化物:Ga2O3


最高价氧化物化学式:Ga2O3


密度:5.907


熔点:29.78


沸点:2403.0


以下为增加内容:


氧化态:Main  Ga+3


Other  Ga+1, Ga+2


声音在其中的传播速率:(m/S):2740



 


晶胞参数:


a = 451.97 pm


b = 766.33 pm


c = 452.6 pm


α = 90°


β = 90°


γ = 90°


 


电离能 (kJ/ mol) 


M - M+ 578.8


M+ - M2+ 1979


M2+ - M3+ 2963


M3+ - M4+ 6200


M4+ - M5+ 8700


M5+ - M6+ 11400


M6+ - M7+ 14400


M7+ - M8+ 17700


M8+ - M9+ 22300


M9+ - M10+ 26100


 


外围电子排布:4s2 4p1


晶体结构:晶胞为正交晶胞。


莫氏硬度:1.5 


核外电子排布:2,8,18,3


颜色和状态:蓝白色金属


原子半径:1.81


常见化合价:+3


 


镓 - 发现


在化学元素周期系建立的过程中,性质相似的元素成为一族已为化学家们接受。当时法国化学家布瓦邦德朗利用光谱分析发觉到,在铝族中,在铝和铟之间缺少一个元


金属镓,镓锭


素。
从1865年开始,他用分光镜寻找这个元素,
分析了许多矿物,但是都没有成功。直到1875年9月,布瓦邦德朗在法国化学家们面前表演了一组实验,证明新元素的存在。当时布瓦邦德朗测定的新元素比重
是4.7,而门捷列夫根据元素周期系推算出的比重应该是5.9~6。布瓦邦德朗又重新测定了这种新元素,证实了比重应该是5.96。他将此物质命名为
gallium,元素符号定为Ga。


镓的发现不仅是一个化学元素的发现,它的发现引起了科学家们对门捷列夫制定的元素周期系的重视,使化学元素周期系得到赞扬和承认。发现人:布瓦博德朗,发现时间和地点:1875在法国的布瓦博德朗在用光谱分析从闪锌矿得到的提取物时,发现了镓。。


 


镓 - 来源及用途


 


元素来源:它凝固时膨胀,,常是作为从铝土矿中提取铝或从锌矿石中提取锌时的副产物得到的。



素用途:用于半导体工业,发光二极管和
砷化镓激光二极管。其他化合物:GaCl3-氯化锌,一种稀有蓝白色三价金属元素,在低温时硬而脆,而一超过室温就熔融。镓的化学活性低于铝,在常温下几
乎不受氧和水的侵蚀,只在高温下才被氧化;它与稀酸作用缓慢,可溶于热的强酸及强碱中,分别形成镓盐或镓酸盐;卤素与镓反应生成三卤化镓或一卤化镓;镓在
高温下能与硫、硒、碲、磷、砷、锑反应,生成的化合物都有半导体性质;镓的氧化和氢氧化物都是两性的,可溶于酸和碱中。镓可用作高温温度计和真空装置中的
密封液;镓的最重要的应用是在制造半导体器件方面;镓还用来制造阴极蒸汽灯等。


 


镓 - 高纯镓


高纯镓:high purity gallium,一般杂质总含量在10


高纯镓


-5
以下的金属镓。按镓含量分为5N,6N,7N和8N共四种级别。质软,淡蓝色光泽。熔点29.78℃。沸点2403℃。斜方晶型,各向异性显著。0℃的电
阻率沿a,b,c三个轴分别为1.75×10-6Ω•m,8.20×10-6Ω•m和55.30×10-6Ω•m。超纯镓剩余电阻率比值
ρ300K/ρ4.2K为55
000。采用化学处理、电解精炼、真空蒸馏、区域熔炼、拉单晶等多种工艺方法制备。主要用于电子工业和通讯领域,是制取各种镓化合物半导体的原料,硅、锗
半导体的掺杂剂,核反应堆的热交换介质。


 


镓 - 硝酸镓


分子
式:Ga(NO3)3•9H2O,用途:为制取镓化合物原料。性质:无色透明结晶体,易吸潮,空气中易分解。易溶于水,20℃时每100g水可溶解
295g,可溶于乙醇,但不溶于乙醚。102℃开始脱水,170℃完全分解,生成二氧化镓。由浓硝酸和氢氧化镓或金属镓作用制取。


 


镓 - 磷酸镓


 


磷酸镓:gallium phosphate


分子式:GaPO4•2H2O 


性质:白色无定形粉末,难溶于水(溶度积1.0×10-21)。140℃脱水。540℃转化为晶体。密度3.26g/cm3。熔点1670℃。和磷酸作用生成磷酸氢镓化合物。


制法:由镓盐溶液和碱金属磷酸盐在pH=5时反应制取。


 


镓 - 氧化镓


氧化镓别名三氧化二镓,氧化镓(Ga2O3)是一种宽禁带半导体,Eg=4


高纯试剂 氧化镓


.9eV,其导电性能和发光特性长期以来一直引起人们的注意。-Ga2O3是一种透明的氧化物半导体材料,在光电子器件方面有广阔的应用前景 ,被用作于Ga基半导体材料的绝缘层,以及紫外线滤光片。它还可以用作O2化学探测器。


 


 


镓 - 提炼



在常温下,看上去象一块锡,如果你想把它放在手心里,它马上就熔化了,成为银亮的小珠。原来镓的熔点很低,只有29.8℃。镓的熔点虽然很低,可是沸点却
非常高,竟高达2070℃!人们就利用镓的这个特性来制造测量高温的温度计。把这种温度计伸进炉火熊熊的炼钢炉中,玻璃外壳都快熔化了,里边的镓还没有沸
腾,如果用耐高温的石英玻璃来制造镓温度计的外壳,它能够一直测到1500℃的高温。所以,人们常用这种温度计来测量反应炉、原子反应堆的温度。


 


镓具有较好的铸造特性,由于它“热缩冷胀”,被用来制造


金属镓



字合金,使字体清晰。在原子能工业中,用镓作为热传导介质,把反应堆中的热量传导出来。
镓与许多金属,如铋、铅、锡、镉,铟、铊等,生成熔点低于60℃的易熔合金。其中如含铟25%的镓铟合金(熔点16℃),含锡8%的镓锡合金(熔点
20℃),可以用在电路熔断器和各种保险装置上,温度一高,它们就会自动熔化断开,起到安全保险的作用。


 


镓同玻璃合作,有增强玻璃折射率的效能,可以用来制造特种光学玻璃。因为镓对光的反射能力特别强,同时又能很好地附着在玻璃上,承受较高的温度,所以用它做反光镜最适宜,镓镜能把70%以上射来的光反射出去。



的一些化合物,如今与尖端科学技术结下了不解之缘。砷化镓是近年来新发现的一种半导体材料,性能优良,用它作为电子元件,可以使电子设备的体积大为缩小,
实现微型化。人们还用砷化镓做元件制成了激光器,这是一种效率高、体积小的新型激光器。镓和磷的化合物——磷化镓是一种半导体发光元件,能够射出红光或绿
光,人们把它做成了各种阿拉伯数字形状,在电子计算机中,就利用它来显示计算结果。


 


引用出處: 


 http://www.hudong.com/wiki/%E9%95%93


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Gallium ( /ˈɡæliəm/ GAL-ee-əm) is a chemical element that has the symbol Ga
and atomic number 31. Elemental gallium does not occur in nature, but
as the gallium(III) salt in trace amounts in bauxite and zinc ores. A
soft silvery metallic poor metal, elemental gallium is a brittle solid
at low temperatures. As it liquefies slightly above room temperature,
it will melt in the hand. Its melting point is used as a temperature
reference point, and from its discovery in 1875 to the semiconductor
era, its primary uses were in high-temperature thermometric applications
and in preparation of metal alloys with unusual properties of
stability, or ease of melting; some being liquid at room temperature or
below. The alloy Galinstan (68.5% Ga, 21.5% In, 10% Sn) has a melting
point of about −19 °C (−2 °F).


In semiconductors, the major-use
compound is gallium arsenide used in microwave circuitry and infrared
applications. Gallium nitride and indium gallium nitride, minority
semiconductor uses, produce blue and violet light-emitting diodes (LEDs)
and diode lasers. Semiconductor use is now almost the entire (> 95%)
world market for gallium, but new uses in alloys and fuel cells
continue to be discovered.


Gallium is not known to be essential in
biology, but because of the biological handling of gallium's primary
ionic salt gallium(III) as though it were iron(III), the gallium ion
localizes to and interacts with many processes in the body in which
iron(III) is manipulated. As these processes include inflammation, which
is a marker for many disease states, several gallium salts are used, or
are in development, as both pharmaceuticals and radiopharmaceuticals in
medicine.


 


 


Contents


[hide]



  • 1 Notable characteristics

  • 2 History

  • 3 Occurrence

  • 4 Production

  • 5 Applications

    • 5.1 Semiconductors

    • 5.2 Wetting and alloy improvement

    • 5.3 Galinstan and other liquid alloys

    • 5.4 Energy storage

    • 5.5 Biomedical applications

      • 5.5.1 As gallium(III) salts

      • 5.5.2 As radiogallium salts



    • 5.6 Other uses



  • 6 Chemistry

    • 6.1 Chalcogen compounds

    • 6.2 Aqueous chemistry

    • 6.3 Pnictogen compounds

    • 6.4 Halides

    • 6.5 Hydrogen compounds



  • 7 Precautions

  • 8 See also

  • 9 References

  • 10 External links


[edit] Notable characteristics


Elemental
gallium is not found in nature, but it is easily obtained by smelting.
Very pure gallium metal has a brilliant silvery color and its solid
metal fractures conchoidally like glass. Gallium metal expands by 3.1
percent when it solidifies, and therefore storage in either glass or
metal containers is avoided, due to the possibility of container
rupture with freezing. Gallium shares the higher-density liquid state
with only a few materials like silicon, germanium, bismuth, antimony and
water.


Gallium attacks most other metals by diffusing into their
metal lattice. Gallium for example diffuses into the grain boundaries of
Al/Zn alloys[1] or steel,[2] making them very brittle. Also, gallium
metal easily alloys with many metals, and was used in small quantities
as a plutonium-gallium alloy in the plutonium cores of the first and
third nuclear bombs, to help stabilize the plutonium crystal
structure.[3]


The melting point of 302.9146 K (29.7646°C,
85.5763°F) is near room temperature. Gallium's melting point (mp) is
one of the formal temperature reference points in the International
Temperature Scale of 1990 (ITS-90) established by BIPM.[4][5][6] The
triple point of gallium of 302.9166 K (29.7666°C, 85.5799°F), is being
used by NIST in preference to gallium's melting point.[7]


Gallium
is a metal that will melt in one's hand. This metal has a strong
tendency to supercool below its melting point/freezing point. Seeding
with a crystal helps to initiate freezing. Gallium is one of the metals
(with caesium, rubidium, francium and mercury) which are liquid at or
near normal room temperature, and can therefore be used in
metal-in-glass high-temperature thermometers. It is also notable for
having one of the largest liquid ranges for a metal, and (unlike
mercury) for having a low vapor pressure at high temperatures. Unlike
mercury, liquid gallium metal wets glass and skin, making it
mechanically more difficult to handle (even though it is substantially
less toxic and requires far fewer precautions). For this reason as well
as the metal contamination problem and freezing-expansion problems
noted above, samples of gallium metal are usually supplied in
polyethylene packets within other containers.


 


 


 


 


Crystallization of gallium from the melt


Gallium
does not crystallize in any of the simple crystal structures. The
stable phase under normal conditions is orthorhombic with 8 atoms in the
conventional unit cell. Each atom has only one nearest neighbor (at a
distance of 244 pm) and six other neighbors within additional 39 pm.
Many stable and metastable phases are found as function of temperature
and pressure.


The bonding between the nearest neighbors is found
to be of covalent character, hence Ga2 dimers are seen as the
fundamental building blocks of the crystal. This explains the drop of
the melting point compared to its neighbour elements aluminium and
indium. The compound with arsenic, gallium arsenide is a semiconductor
commonly used in light-emitting diodes.


High-purity gallium is dissolved slowly by mineral acids.


Gallium has no known biological role, although it has been observed to stimulate metabolism.[8]


[edit] History


Gallium (the Latin Gallia
means "Gaul", essentially modern France) was discovered
spectroscopically by Paul Emile Lecoq de Boisbaudran in 1875 by its
characteristic spectrum (two violet lines) in an examination of a zinc
blende from the Pyrenees.[9] Before its discovery, most of its
properties had been predicted and described by Dmitri Mendeleev (who had
called the hypothetical element "eka-aluminium" on the basis of its
position in his periodic table). Later, in 1875, Lecoq obtained the free
metal by electrolysis of its hydroxide in potassium hydroxide solution.
He named the element "gallia" after his native land of France. It was
later claimed that, in one of those multilingual puns so beloved of men
of science in the early 19th century, he had also named gallium after
himself, as his name, "Le coq", is the French for "the rooster", and
the Latin for "rooster" is "gallus"; however, in an 1877 article Lecoq denied this supposition.[10] (The supposition was also noted in Building Blocks of the Universe, a book on the elements by Isaac Asimov; cf. the naming of the J/ψ meson.)


[edit] Occurrence


Gallium
does not exist in free form in nature, and the few high-gallium
minerals such as gallite (CuGaS2) are too rare to serve as a primary
source of the element or its compounds. Its abundance in the Earth's
crust is approximately 16.9 ppm.[11] Gallium is found and extracted as a
trace component in bauxite and to a small extent from sphalerite. The
amount extracted from coal, diaspore and germanite in which gallium is
also present is negligible. The United States Geological Survey (USGS)
estimates gallium reserves to exceed 1 million tonnes, based on 50 ppm
by weight concentration in known reserves of bauxite and zinc
ores.[12][13] Some flue dusts from burning coal have been shown to
contain small quantities of gallium, typically less than 1% by
weight.[14][15][16][17]


[edit] Production


The
only two economic sources for gallium are as byproduct of aluminium
and zinc production, while the sphalerite for zinc production is the
minor source. Most gallium is extracted from the crude aluminium
hydroxide solution of the Bayer process for producing alumina and
aluminium. A mercury cell electrolysis and hydrolysis of the amalgam
with sodium hydroxide leads to sodium gallate. Electrolysis then gives
gallium metal. For semiconductor use, further purification is carried
out using zone melting, or else single crystal extraction from a melt
(Czochralski process). Purities of 99.9999% are routinely achieved and
commercially widely available.[18] An exact number for the world wide
production is not available, but it is estimated that in 2007 the
production of gallium was 184 tonnes with less than 100 tonnes from
mining and the rest from scrap recycling.[12]


[edit] Applications


[edit] Semiconductors


 


 


 


 


Gallium based blue LEDs


 


 


 


 


Gallium phosphate crystal


The
semiconductor applications are the main reason for the low-cost
commercial availability of the extremely high-purity (99.9999+%) metal.


Gallium
arsenide (GaAs) and gallium nitride (GaN) used in electronic
components represented about 98% of the gallium consumption in the
United States in 2007. About 66% of semiconductor gallium is used in
the U.S. in integrated circuits (mostly gallium arsenide), such as the
manufacture of ultra-high speed logic chips and MESFETs for low-noise
microwave preamplifiers in cell phones. About 20% is used in
optoelectronics.[12] World wide gallium arsenide makes up 95% of the
annual global gallium consumption.[18]


Gallium arsenide is used in
optoelectronics in a variety of infrared applications. Aluminium
gallium arsenide (AlGaAs) is used in high-powered infrared laser diodes.
As a component of the semiconductors indium gallium nitride and gallium
nitride, gallium is used to produce blue and violet optoelectronic
devices, mostly laser diodes and light-emitting diodes. For example,
gallium nitride 405 nm diode lasers are used as a violet light source
for higher-density compact disc data storage, in the Blu-ray Disc
standard.[19]


Gallium is used as a dopant for the production of
solid-state devices such as transistors. However, worldwide the actual
quantity used for this purpose is minute, since dopant levels are
usually of the order of a few parts per million.


Multijunction
photovoltaic cells, developed for satellite power applications, are made
by molecular beam epitaxy or metalorganic vapour phase epitaxy of thin
films of gallium arsenide, indium gallium phosphide or indium gallium
arsenide.The Mars Exploration Rovers and several satellites use triple
junction gallium arsenide on germanium cells.[20] Gallium is the rarest
component of new photovoltaic compounds (such as copper indium gallium
selenium sulfide or Cu(In,Ga)(Se,S)2) for use in solar panels as a more
efficient alternative to crystalline silicon.[21]


[edit] Wetting and alloy improvement



  • Because
    gallium wets glass or porcelain, gallium can be used to create
    brilliant mirrors. When the wetting action of gallium-alloys is not
    desired (as in Galinstan glass thermometers), the glass must be
    protected with a transparent layer of gallium(III) oxide.[22]

  • Gallium
    readily alloys with most metals, and has been used as a component in
    low-melting alloys. The plutonium used in nuclear weapon pits is
    machined by alloying with gallium to stabilize its δ phase.[23]

  • Gallium added in quantities up to 2% in common solders can aid wetting and flow characteristics.


[edit] Galinstan and other liquid alloys


A
nearly eutectic alloy of gallium, indium, and tin is a room
temperature liquid which is widely available in medical thermometers,
replacing problematic mercury. This alloy, with the trade-name Galinstan
(with the "-stan" referring to the tin), has a low freezing point of
−19 °C (−2.2°F).[24] It has been suggested that this family of alloys
could also be used to cool computer chips in place of water.[25] Much
research is being devoted to gallium alloys as substitutes for mercury
dental amalgams, but these compounds have yet to see wide acceptance.


[edit] Energy storage


Aluminium
is reactive enough to reduce water to hydrogen, being oxidized to
aluminium oxide. However, the aluminium oxide forms a protective coat
which prevents further reaction. Galinstan has been applied to activate
aluminium (removing the oxide coat), so that aluminium can react with
water, generating hydrogen and steam in a reaction being considered as a
helpful step in a hydrogen economy.[26][dubious – discuss] A
number of other gallium-aluminium alloys are also usable for the
purpose of essentially acting as chemical energy store to generate
hydrogen from water, on-site.


After reaction with water the
resultant aluminium oxide and gallium mixture must be reformed back
into electrodes with energy input.[26][27] The thermodynamic efficiency
of the aluminium smelting process is estimated as 50%.[28] Therefore, at
most only half the energy that goes into smelting the aluminium could
be recovered by a hydrogen fuel cell.


[edit] Biomedical applications


[edit] As gallium(III) salts



  • Gallium
    nitrate (brand name Ganite) has been used as an intravenous
    pharmaceutical to treat hypercalcemia associated with tumor metastasis
    to bones. Gallium is thought to interfere with osteoclast function. It
    may be effective when other treatments for maligancy-associated
    hypercalcemia are not.[29]

  • Gallium maltolate, an
    orally-aborbable form of gallium(III) ion, is in clinical and
    preclinical trials as a potential treatment for a number of types of
    cancer, infectious disease, and inflammatory disease.[30]

  • Research
    is being conducted to determine whether gallium ion can be used to
    fight bacterial infections in people with cystic fibrosis. Gallium is
    similar in size to iron, an essential nutrient for respiration. When
    gallium ions are mistakenly picked up by bacteria such as Pseudomonas,
    the bacteria's ability to respire is interfered with and the bacteria
    die. The mechanism behind this is that iron is redox active, which
    allows for the transfer of electrons during respiration, but gallium is
    redox inactive.[31][32]


[edit] As radiogallium salts


Gallium-67
salts such as gallium citrate and gallium nitrate are used as
radiopharmaceutical agents in a nuclear medicine imaging procedure
commonly referred to as a gallium scan. The form or salt of gallium is
not important, since it is the free dissolved gallium ion Ga3+ which is
the active radiotracer. For these applications, the radioactive isotope
67Ga is used. The body handles Ga3+ in many ways as though it were
iron, and thus it is bound (and concentrates) in areas of inflammation,
such as infection, and also areas of rapid cell division. This allows
such sites to be imaged by nuclear scan techniques. This use has
largely been replaced by fluorodeoxyglucose (FDG) for positron emission
tomography, "PET" scan and indium-111 labelled leukocyte scans.
However, the localization of gallium in the body has some properties
which make it unique in some circumstances from competing modalities
using other radioisotopes.


Gallium-68, a positron emitter with a
half life of 68 min., is now used as a diagnostic radionuclide in
CT-PET when linked to pharmaceutical preparations such as DOTATOC, a
somatostatin analogue used for neuroendocrine tumors investigation, and
DOTATATE, a newer one, used for neuroendocrine metastasis and lung
neuroendocrine cancer, such as certain types of microcytoma.
Galium-68's preparation as a pharmaceutical is chemical and the
radionuclide is extracted by elution from germanium-68, a synthetic
radioisotope of germanium, in gallium-68 generators.


[edit] Other uses



  • Magnesium gallate containing impurities (such as Mn2+), is beginning to be used in ultraviolet-activated phosphor powder.

  • Neutrino
    detection. Possibly the largest amount of pure gallium ever collected
    in a single spot is the Gallium-Germanium Neutrino Telescope used by
    the SAGE experiment at the Baksan Neutrino Observatory in Russia. This
    detector contains 55-57 tonnes of liquid gallium.[33] Another experiment
    was the GALLEX neutrino detector operated in the early 1990s in an
    Italian mountain tunnel. The detector contained 12.2 tons of watered
    gallium-71. Solar neutrinos caused a few atoms of Ga-71 to become
    radioactive Ge-71, which were detected. The solar neutrino flux deduced
    was found to have a deficit of 40% from theory. This was not explained
    until better solar neutrino detectors and theories were constructed
    (see SNO).[34]

  • As a liquid metal ion source for a focused ion beam.

  • As alloying element in the magnetic shape memory alloy Ni-Mn-Ga.

  • In
    a classic prank by scientists, who fashion gallium spoons and serve
    tea to unsuspecting guests. The spoons melt in the hot tea.[35]


[edit] Chemistry


Gallium
is found primarily in the +3 oxidation state. The +1 oxidation is also
attested in some compounds, although they tend to disproportionate into
elemental gallium and gallium(III) compounds. What are sometimes
referred to as gallium(II) compounds are actually mixed-oxidation state
compounds containing both gallium(I) and gallium(III).[36]


[edit] Chalcogen compounds


At
room temperature, gallium metal is unreactive towards air and water
due to the formation of a passive, protective oxide layer. At higher
temperatures, however, it reacts with oxygen in the air to form
gallium(III) oxide, Ga2O3.[36] Reducing Ga2O3 with elemental gallium in
vacuum at 500 °C to 700 °C yields the dark brown gallium(I) oxide,
Ga2O.[37]:285 Ga2O is a very strong reducing agent, capable of reducing
H2SO4 to H2S.[37]:207 It disproportionates at 800 °C back to gallium and
Ga2O3.[38]


Gallium(III) sulfide, Ga2S3, has 3 possible crystal
modifications.[38]:104 It can be made by the reaction of gallium with
hydrogen sulfide (H2S) at 950 °C.[37]:162 Alternatively, Ga(OH)3 can
also be used at 747 °C:[39]


 


2 Ga(OH)3 + 3 H2S → Ga2S3 + 6 H2O


Reacting a mixture of alkali metal carbonates and Ga2O3 with H2S leads to the formation of thiogallates
containing the [Ga2S4]2− anion. Strong acids decompose these salts,
releasing H2S in the process.[38]:104-105 The mercury salt, HgGa2S4, can
be used as a phosphor.[40]


Gallium also forms sulfides in lower
oxidation states, such as gallium(II) sulfide and the green gallium(I)
sulfide, the latter of which is produced from the former by heating to
1000 °C under a stream of nitrogen.[38]:94


The other binary
chalcogenides, Ga2Se3 and Ga2Te3, have zincblende structure. They are
all semiconductors, but are easily hydrolysed, limiting their
usefulness.[38]:104


[edit] Aqueous chemistry


Strong
acids dissolve gallium, forming gallium(III) salts such as Ga2(SO4)3
and Ga(NO3)3. Aqueous solutions of gallium(III) salts contain the
hydrated gallium ion, [Ga(H2O)6]3+.[41]:1033 Gallium(III) hydroxide,
Ga(OH)3, may be precipitated from gallium(III) solutions by adding
ammonia. Dehydrating Ga(OH)3 at 100 °C produces gallium oxide hydroxide,
GaO(OH).[37]:140-141


 


Alkaline hydroxide solutions dissolve gallium, forming gallate salts containing the Ga(OH)−


4
anion.[36][41]:1033[42] Gallium hydroxide, which is amphoteric, also
dissolves in alkali to form gallate salts.[37]:141 Although earlier work
suggested Ga(OH)3−


6 as another possible gallate anion,[43] this species was not found in later work.[42]


[edit] Pnictogen compounds


Gallium
reacts with ammonia at 1050 °C to form gallium nitride, GaN. Gallium
also forms binary compounds with phosphorus, arsenic, and antimony:
gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide
(GaSb). These compounds have the same structure as ZnS, and have
important semiconducting properties.[41]:1034 GaP, GaAs, and GaSb can be
synthesized by the direct reaction of gallium with elemental
phosphorus, arsenic, or antimony.[38]:99 They exhibit higher electrical
conductivity than GaN.[38]:101 GaP can also be synthesized by the
reaction of Ga2O with phosphorus at low temperatures.[44]


Gallium also forms ternary nitrides; for example:[38]:99


 


Li3Ga + N2 → Li3GaN2


Similar
compounds with phosphorus and antimony also exist: Li3GaP2 and
Li3GaAs2. These compounds are easily hydrolyzed by dilute acids and
water.[38]:101


[edit] Halides


Gallium(III)
oxide reacts with fluorinating agents such as HF or F2 to form
gallium(III) fluoride, GaF3. It is an ionic compound strongly insoluble
in water. However, it does dissolve in hydrofluoric acid, in which it
forms an adduct with water, GaF3·3H2O. Attempting to dehydrate this
adduct instead forms GaF2OH·nH2O. The adduct reacts with ammonia to form GaF3·3NH3, which can then be heated to form anhydrous GaF3.[37]:128-129


Gallium(III)
chloride is formed by the reaction of gallium metal with chlorine
gas.[36] Unlike the trifluoride, gallium(III) chloride exists as dimeric
molecules, Ga2Cl6, with a melting point of 78 °C. This is also the case
for the bromide and iodide, Ga2Br6 and Ga2I6.[37]:133


 


Like
the other group 13 trihalides, gallium(III) halides are Lewis acids,
reacting as halide acceptors with alkali metal halides to form salts
containing GaX−


4 anions, where X is a halogen. They also react with alkyl halides to form carbocations and GaX−


4.[37]:136-137


When
heated to a high temperature, gallium(III) halides react with
elemental gallium to form the respective gallium(I) halides. For
example, GaCl3 reacts with Ga to form GaCl:


 


2 Ga + GaCl3 3 GaCl (g)


At
lower temperatures, the equilibrium shifts toward the left and GaCl
disproportionates back to elemental gallium and GaCl3. GaCl can also be
made by the reaction of Ga with HCl at 950 °C; it can then be condensed
as red solid.[41]:1036


Gallium(I) compounds can be stabilized by forming adducts with Lewis acids. For example:


 


GaCl + AlCl3 → Ga+[AlCl4]−


The
so-called "gallium(II) halides", GaX2, are actually adducts of
gallium(I) halides with the respective gallium(III) halides, having the
structure Ga+[GaX4]−. For example:[36][41]:1036[45]


 


GaCl + GaCl3 → Ga+[GaCl4]−


[edit] Hydrogen compounds


Like aluminium, gallium also forms a hydride, GaH3, known as gallane, which may be obtained by the reaction of lithium gallanate (LiGaH4) with gallium(III) chloride at −30 °C:[41]:1031


 


3 LiGaH4 + GaCl3 → 3 LiCl + 4 GaH3


In the presence of dimethyl ether as solvent, GaH3 polymerizes to (GaH3)n. If no solvent is used, the dimer Ga2H6 (digallane)
is formed as a gas. Its structure is similar to diborane, having two
hydrogen atoms bridging the two gallium centers,[41]:1031 unlike α-AlH3
in which aluminium has a coordination number of 6.[41]:1008


Gallane is unstable above −10 °C, decomposing to elemental gallium and hydrogen.[46]


[edit] Precautions


While
not considered toxic, the data about gallium are inconclusive. Some
sources suggest that it may cause dermatitis from prolonged exposure;
other tests have not caused a positive reaction. Like most metals,
finely divided gallium loses its luster and powdered gallium appears
gray. Thus, when gallium is handled with bare hands, the extremely fine
dispersion of liquid gallium droplets, which results from wetting skin
with the metal, may appear as a gray skin stain.


 


引用出處: 


 http://en.wikipedia.org/wiki/Gallium


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BW Bewise Inc. Willy Chen willy@tool-tool.com  bw@tool-tool.com  www.tool-tool.com
skype:willy_chen_bw mobile:0937-618-190 Head &Administration Office
No.13,Shiang Shang 2nd St., West Chiu Taichung,Taiwan 40356
http://www.tool-tool.com/
/ FAX:+886 4 2471 4839 N.Branch 5F,No.460,Fu Shin North
Rd.,Taipei,Taiwan S.Branch No.24,Sec.1,Chia Pu East Rd.,Taipao
City,Chiayi Hsien,Taiwan


Welcome to BW
tool world! We are an experienced tool maker specialized in cutting
tools. We focus on what you need and endeavor to research the best
cutter to satisfy users
demand. Our
customers involve wide range of industries, like mold & die,
aerospace, electronic, machinery, etc. We are professional expert in
cutting field. We would like to solve every problem from you. Please
feel free to contact us, its our pleasure to serve for you.
BW product including: cutting toolaerospace tool .HSS  DIN Cutting toolCarbide end millsCarbide cutting toolNAS Cutting toolNAS986 NAS965 NAS897 NAS937orNAS907 Cutting Tools,Carbide end milldisc milling cutter,Aerospace cutting toolhss drillФрезерыCarbide drillHigh speed steelCompound SharpenerMilling cutterINDUCTORS FOR PCD’CVDD(Chemical Vapor Deposition Diamond )’PCBN (Polycrystalline Cubic Boron Nitride) Core drillTapered end millsCVD Diamond Tools Inserts’PCD Edge-Beveling Cutter(Golden FingerPCD V-CutterPCD Wood toolsPCD Cutting toolsPCD Circular Saw BladePVDD End Millsdiamond tool. INDUCTORS FOR PCD . POWDER FORMING MACHINE Single Crystal Diamond Metric end millsMiniature end millsСпециальные режущие инструментыПустотелое сверло Pilot reamerFraisesFresas con mango PCD (Polycrystalline diamond) ‘FresePOWDER FORMING MACHINEElectronics cutterStep drillMetal cutting sawDouble margin drillGun barrelAngle milling cutterCarbide burrsCarbide tipped cutterChamfering toolIC card engraving cutterSide cutterStaple CutterPCD diamond cutter specialized in grooving floorsV-Cut PCD Circular Diamond Tipped Saw Blade with Indexable Insert PCD Diamond Tool Saw Blade with Indexable InsertNAS toolDIN or JIS toolSpecial toolMetal slitting sawsShell end millsSide and face milling cuttersSide chip clearance sawsLong end millsend mill grinderdrill grindersharpenerStub roughing end millsDovetail milling cuttersCarbide slot drillsCarbide torus cuttersAngel carbide end millsCarbide torus cuttersCarbide ball-nosed slot drillsMould cutterTool manufacturer.


Bewise Inc.  www.tool-tool.com


ようこそBewise Inc.の世界へお越し下さいませ、先ず御目出度たいのは新たな


情報を受け取って頂き、もっと各産業に競争力プラス展開。


弊社は専門なエンドミルの製造メーカーで、客先に色んな分野のニーズ


豊富なパリエーションを満足させ、特にハイテク品質要求にサポート致します。


弊社は各領域に供給できる内容は:


(1)精密HSSエンドミルのR&D


(2)Carbide Cutting tools設計


(3)鎢鋼エンドミル設計


(4)航空エンドミル設計


(5)超高硬度エンドミル


(6)ダイヤモンドエンドミル


(7)医療用品エンドミル設計


(8)自動車部品&材料加工向けエンドミル設計


弊社の製品の供給調達機能は:


(1)生活産業~ハイテク工業までのエンドミル設計


(2)ミクロエンドミル~大型エンドミル供給


(3)小Lot生産~大量発注対応供給


(4)オートメーション整備調達


(5)スポット対応~流れ生産対応


弊社の全般供給体制及び技術自慢の総合専門製造メーカーに貴方のご体験を御待ちしております。   


Bewise
Inc. talaşlı imalat sanayinde en fazla kullanılan ve üç eksende (x,y,z)
talaş kaldırabilen freze takımlarından olan Parmak Freze imalatçısıdır.
Çok geniş ürün yelpazesine sahip olan firmanın başlıca ürünlerini
Karbür Parmak Frezeler, Kalıpçı Frezeleri, Kaba Talaş Frezeleri, Konik
Alın Frezeler, Köşe Radyüs Frezeler, İki Ağızlı Kısa ve Uzun Küresel
Frezeler, İç Bükey Frezeler vb. şeklinde sıralayabiliriz.


BW специализируется
в научных исследованиях и разработках, и снабжаем самым
высокотехнологичным карбидовым материалом для поставки режущих /
фрезеровочных инструментов для почвы, воздушного пространства и
электронной индустрии. В нашу основную продукцию входит твердый карбид /
быстрорежущая сталь, а также двигатели, микроэлектрические дрели, IC
картонорезальные машины, фрезы для гравирования, режущие пилы,
фрезеры-расширители, фрезеры-расширители с резцом, дрели, резаки форм
для шлицевого вала / звездочки роликовой цепи, и специальные нано
инструменты. Пожалуйста, посетите сайт  
www.tool-tool.com  для получения большей информации.


BW
is specialized in R&D and sourcing the most advanced carbide
material with high-tech coating to supply cutting / milling tool for
mould & die, aero space and electronic industry. Our main products
include solid carbide / HSS end mills, micro electronic drill, IC card
cutter, engraving cutter, shell end mills, cutting saw, reamer, thread
reamer, leading drill, involute gear cutter for spur wheel, rack and
worm milling cutter, thread milling cutter, form cutters for spline
shaft/roller chain sprocket, and special tool, with nano grade. Please
visit our web  
www.tool-tool.com  for more info.


beeway 發表在 痞客邦 留言(0) 人氣()


非圓零件在外圓磨床上磨削加工


在加工非圓形狀的零件時,外圓磨床 正在提高生產力。從事非圓磨削的車間、過去採用凸輪驅動磨床或結合使用平面磨床與工其磨床,這些方 法已被證明在生產中不靈活,而比安裝麻煩。


 另一方面,外圓磨床在其能夠處理的磨削工件類型時具有靈話性,同時具有車間降低生產成本必須的精確度與剛 性。此外,外圓磨床能夠使車間安裝較少的機床,就能夠加工更多的零件。


 非
圓零件在外圓磨床上磨削的成功,取決於準確的機床運動,因為此方法是兩個機床軸C軸與X軸之間的內插 法。C軸即工件旋轉軸,X軸是磨頭軸。磨頭
從工件進出,跟隨非圓零件輪廓的輪廓線。通常與X軸是反向,同時,工件夾頭主軸加速與減速,維持磨 輪上負載恆定,避免零件表面缺陷。


 為了確保軸的運動準確.許多外圓磨床製造商在X軸上結合了靜壓方法、線性電機、高分辭率標尺及在C軸上安裝整體式電機、直接馭動靜壓主軸及旋轉編碼 器。所有這此部件一起作用.幾乎可以消除X軸與C軸的背隙與微小移動。


CineticLandisGrinding
公司的項目投標經理DwightMyers稱,“在非圓磨削中,當機床軸反向時,車間最該關注的是'衝擊運動',例如,帶滾珠螺桿的機床,當軸反向時,經
歷了柔性(跳動與/或偏轉)。另一方面,線性電機及靜壓方法系統具有可消除此種現象所必須的剛性。”


 



Hardinge公司Kellenberger磨床磨削產品經理NelsonBeaulieu稱:“靜壓方法可以讓磨床進行極慢地運動,不會發生微小
位移,位移會在零件表面與輪廓上產生微小的反向痕跡。Beaulieu還指出,靜壓主軸消除了主軸反向錯誤,當在中心線之上或之下磨削時,這種錯誤可從零
件表面及磨削負載的波動引起的錯誤中顯露出來,在非圓零件磨削中通常會出現這種情況。他補充所,甚至當其上負荷發生變化時,靜壓主軸仍能保持剛
性。


數製造商使用整體式直接驅動主軸,用於非圓零件磨削的外圓磨床的C軸。此種主
軸是直接與驅動它們的伺服電機耦合。這些電機實際上是嵌在旋轉軸內,不需要皮帶或齒輪。VermontMachineTool(機床)分公司Bryant
磨床公司主軸分部的主管 EugeneSupernor說皮帶或齒輪會形響軸的準確度。


 然而,並不是所有製造商都使用液壓主
軸,Studer為其外圓磨床配備的就是採用高精度滾珠軸承的直接驅動主
軸。聯合磨削技術公司(UnitedGrindingTechnologies)Studer外圓
磨床分公司的全國銷售經理HansUeltschi稱,公司發現,滾珠軸承主軸在速度變化的悄況下,可提供的剛性增加,對非圓零件工藝條件的改變能夠做出
更好的反應。


 而靜壓方法,線性電機及直接驅動仁軸可提供準確的運動.它採用特殊的軟件及CNC來編制程序,使其運動同 步。若無上述軟件,在外圓磨床上磨削非圓零件,需要手動編制工件速度與滾輪進給變化的程 序。


 在非圓零件磨削中,工件速度與磨床滾輪進給必須經常改變,以與金屬去除率的變化相一致。例如,車間 可能在一種非圓零件的旋轉過程中,運行三種或四種不同的工件旋轉速度,軟件必須能夠啟動工件速度與滾輪進給的這些變 化。


 特
殊的軟件包還讓車間能夠採用高速加工技術,進行非圓磨削,進一步優化工藝。實質上.磨削採用的高
速加工技術,與維持恆定磨削表面長度的工件旋轉速度的變化有關。若在非圓磨削過程中工件轉速保持恆
定,工件的某些部分將會轉得太慢,同時,其它部分可能轉得太快。轉動得太慢的區域,因磨輪在其上停
留時間太長,顯示出凹痕與燒傷。反之,轉動得太快的區城.因切削不當,形成偏差。


 Ueltschi解釋道:“以砂輪作切削刀具。當磨削一個零件時,車間並不使用固定的進給速度。它們在平直的地方加速,而在各拐角速度減慢,以在刀具上維 持穩定的切削力。對高速非圓磨削來說,情況同樣如此”。


 除保持穩定的切削力這一難題之外,非圓磨削的車間必須能夠從一個零件特點平穩過渡與相切到下一個特 點。例如,在零件中要調合兩種特徵.曲而與平面之間需要適當的直徑,就像在沖床中那樣。


 機床運動的滯後,刀具或安裝的問題,軟件的反應時間及機床的程序編制,這些都能導致切面及部件特徵之間的過渡質量很 差。但是,非圓零件的磨削質量差常常是因為缺少剛度。這就是為什麼幾乎每家外圓機床製造商部認為,要想非圓磨削操作準確,必須擁有剛性的機床平台。


這種平台包括安裝在具有熱穩定性與機械穩定性的底板上的重型部件。


 


引用出處: 


 http://tw.myblog.yahoo.com/lifung-biz/article?mid=4409&prev=-1&next=4408


歡迎來到Bewise Inc.的世界,首先恭喜您來到這接受新的資訊讓產業更有競爭力,我們是提供專業刀具製造商,應對客戶高品質的刀具需求,我們可以協助客戶滿足您對產業的不同要求,我們有能力達到非常卓越的客戶需求品質,這是現有相關技術無法比擬的,我們成功的滿足了各行各業的要求,包括:精密HSS DIN切削刀具協助客戶設計刀具流程DIN or JIS 鎢鋼切削刀具設計NAS986 NAS965 NAS897 NAS937orNAS907 航太切削刀具,NAS航太刀具設計超高硬度的切削刀具醫療配件刀具設計複合式再研磨機PCD地板專用企口鑽石組合刀具粉末造粒成型機主機版專用頂級電桿PCBN刀具PCD刀具單晶刀具PCD V-Cut捨棄式圓鋸片組粉末成型機航空機械鉸刀主機版專用頂級電汽車業刀具設計電子產業鑽石刀具木工產業鑽石刀具銑刀與切斷複合再研磨機銑刀與鑽頭複合再研磨機銑刀與螺絲攻複合再研磨機等等。我們的產品涵蓋了從民生刀具到工業級的刀具設計;從微細刀具到大型刀具;從小型生產到大型量產;全自動整合;我們的技術可提供您連續生產的效能,我們整體的服務及卓越的技術,恭迎您親自體驗!!  


BW Bewise Inc. Willy Chen willy@tool-tool.com  bw@tool-tool.com  www.tool-tool.com
skype:willy_chen_bw mobile:0937-618-190 Head &Administration Office
No.13,Shiang Shang 2nd St., West Chiu Taichung,Taiwan 40356
http://www.tool-tool.com/
/ FAX:+886 4 2471 4839 N.Branch 5F,No.460,Fu Shin North
Rd.,Taipei,Taiwan S.Branch No.24,Sec.1,Chia Pu East Rd.,Taipao
City,Chiayi Hsien,Taiwan


Welcome to BW
tool world! We are an experienced tool maker specialized in cutting
tools. We focus on what you need and endeavor to research the best
cutter to satisfy users
demand. Our
customers involve wide range of industries, like mold & die,
aerospace, electronic, machinery, etc. We are professional expert in
cutting field. We would like to solve every problem from you. Please
feel free to contact us, its our pleasure to serve for you.
BW product including: cutting toolaerospace tool .HSS  DIN Cutting toolCarbide end millsCarbide cutting toolNAS Cutting toolNAS986 NAS965 NAS897 NAS937orNAS907 Cutting Tools,Carbide end milldisc milling cutter,Aerospace cutting toolhss drillФрезерыCarbide drillHigh speed steelCompound SharpenerMilling cutterINDUCTORS FOR PCD’CVDD(Chemical Vapor Deposition Diamond )’PCBN (Polycrystalline Cubic Boron Nitride) Core drillTapered end millsCVD Diamond Tools Inserts’PCD Edge-Beveling Cutter(Golden FingerPCD V-CutterPCD Wood toolsPCD Cutting toolsPCD Circular Saw BladePVDD End Millsdiamond tool. INDUCTORS FOR PCD . POWDER FORMING MACHINE Single Crystal Diamond Metric end millsMiniature end millsСпециальные режущие инструментыПустотелое сверло Pilot reamerFraisesFresas con mango PCD (Polycrystalline diamond) ‘FresePOWDER FORMING MACHINEElectronics cutterStep drillMetal cutting sawDouble margin drillGun barrelAngle milling cutterCarbide burrsCarbide tipped cutterChamfering toolIC card engraving cutterSide cutterStaple CutterPCD diamond cutter specialized in grooving floorsV-Cut PCD Circular Diamond Tipped Saw Blade with Indexable Insert PCD Diamond Tool Saw Blade with Indexable InsertNAS toolDIN or JIS toolSpecial toolMetal slitting sawsShell end millsSide and face milling cuttersSide chip clearance sawsLong end millsend mill grinderdrill grindersharpenerStub roughing end millsDovetail milling cuttersCarbide slot drillsCarbide torus cuttersAngel carbide end millsCarbide torus cuttersCarbide ball-nosed slot drillsMould cutterTool manufacturer. 


Bewise Inc.  www.tool-tool.com


ようこそBewise Inc.の世界へお越し下さいませ、先ず御目出度たいのは新たな


情報を受け取って頂き、もっと各産業に競争力プラス展開。


弊社は専門なエンドミルの製造メーカーで、客先に色んな分野のニーズ


豊富なパリエーションを満足させ、特にハイテク品質要求にサポート致します。


弊社は各領域に供給できる内容は:


(1)精密HSSエンドミルのR&D


(2)Carbide Cutting tools設計


(3)鎢鋼エンドミル設計


(4)航空エンドミル設計


(5)超高硬度エンドミル


(6)ダイヤモンドエンドミル


(7)医療用品エンドミル設計


(8)自動車部品&材料加工向けエンドミル設計


弊社の製品の供給調達機能は:


(1)生活産業~ハイテク工業までのエンドミル設計


(2)ミクロエンドミル~大型エンドミル供給


(3)小Lot生産~大量発注対応供給


(4)オートメーション整備調達


(5)スポット対応~流れ生産対応


弊社の全般供給体制及び技術自慢の総合専門製造メーカーに貴方のご体験を御待ちしております。     


Bewise
Inc. talaşlı imalat sanayinde en fazla kullanılan ve üç eksende
(x,y,z) talaş kaldırabilen freze takımlarından olan Parmak Freze
imalatçısıdır. Çok geniş ürün yelpazesine sahip olan firmanın başlıca
ürünlerini Karbür Parmak Frezeler, Kalıpçı Frezeleri, Kaba Talaş
Frezeleri, Konik Alın Frezeler, Köşe Radyüs Frezeler, İki Ağızlı Kısa
ve Uzun Küresel Frezeler, İç Bükey Frezeler vb. şeklinde
sıralayabiliriz.


BW специализируется
в научных исследованиях и разработках, и снабжаем самым
высокотехнологичным карбидовым материалом для поставки режущих /
фрезеровочных инструментов для почвы, воздушного пространства и
электронной индустрии. В нашу основную продукцию входит твердый карбид /
быстрорежущая сталь, а также двигатели, микроэлектрические дрели, IC
картонорезальные машины, фрезы для гравирования, режущие пилы,
фрезеры-расширители, фрезеры-расширители с резцом, дрели, резаки форм
для шлицевого вала / звездочки роликовой цепи, и специальные нано
инструменты. Пожалуйста, посетите сайт  
www.tool-tool.com  для получения большей информации.


BW
is specialized in R&D and sourcing the most advanced carbide
material with high-tech coating to supply cutting / milling tool for
mould & die, aero space and electronic industry. Our main products
include solid carbide / HSS end mills, micro electronic drill, IC card
cutter, engraving cutter, shell end mills, cutting saw, reamer, thread
reamer, leading drill, involute gear cutter for spur wheel, rack and
worm milling cutter, thread milling cutter, form cutters for spline
shaft/roller chain sprocket, and special tool, with nano grade. Please
visit our web  
www.tool-tool.com  for more info.


beeway 發表在 痞客邦 留言(0) 人氣()

 化學氣相沉積(CVD)金剛石作為一種新型超硬刀具材料,為金剛石刀具的應用開闢了新的途 徑。CVD金剛石刀具主要有兩種類型:CVD金剛石薄膜塗層刀具和CVD金剛石厚膜焊接刀 具。目前來說,CVD金剛石厚膜刀具的應用比較廣泛。
一、CVD金剛石薄膜塗層刀具
 CVD金剛石薄膜塗層刀具是指通過CVD方法在一定溫度下使金剛石沉積於某些基體(通常為K類硬質合金)刀片上的刀具,其金剛石膜厚度約為10~30µm。
 CVD
金剛石薄膜塗層刀具因金剛石厚度較薄,難於刃磨,前、後刀面及刃口質量較差,只適用於粗加工、半精加工和復雜形狀刀
具。</span> <span>粗加工的切削較大,當金剛石與基體間的附著力不足以抗拒切削力的破壞時,金剛石膜就會脫
落。這種刀具加工出的工件表面粗糙度一般大於Ra0.2µm。

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摘要:在螺紋車削加工中,可轉位刀片的微小位移是導致問題出現的主要原因之一。切削刃在切削過程中 的輕微移動往往會導致過短的刀具壽命、不一致的性能表現等不能令人滿意的加工結果。
 在螺紋車削加工中,可轉位刀片的微小位移是導致問題出現的主要原因之一。切削刃在切削過程中的輕微 移動往往會導致過短的刀具壽命、不一致的性能表現等不能令人滿意的加工結果。
但是,最近可轉位刀片技術有了新的突破,能夠使刀片穩固地定位於刀片座中,實現了切削刃穩定性的驚人改變。
 該技術上的突破為更硬、更耐用的刀片材質的應用開啟了一扇大門,可靠地縮短了加工循環時間,提高了生產效率。

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硬質合金和高速鋼刀具的重磨和再塗層是目前常見的工藝。儘管刀具重磨或再塗層的價格僅為新刀具製造 成本的一小部分,但卻能延長刀具壽命。重磨工藝是特殊刀具或價格昂貴刀具的典型處理方法。可進行重磨或再塗層的刀具包括鑽頭、銑刀、滾刀以及成形刀具等。
 刀具的重磨
 在
鑽頭或銑刀的重磨過程中,需要磨削切削刃以除去原塗層,因此所用砂輪必須具有足夠的硬度。重磨對
切削刃的預處理是非常關鍵的,不僅要保證刀具重磨後原始切削刃的幾何形狀能被完全準確地保留,而且要求重磨對PVD塗層刀具必須是“安全”
的。因此,必須避免不合理的磨削工藝(例如:高溫導致刀具表層受損的粗磨或乾磨)。

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專用齒輪加工機床的優勢分析
近年來,隨著計算機數控技術的發展和普遍應用,齒輪加工機床、加工工藝技術也有了很大的發展,特別是在高
精度、大型齒輪加工方面出現了許多新技 術。比
如新型數控銑齒機,以銑刀代替滾刀,高速、高效地加工大型風電齒輪、核電齒輪;新型螺旋錐齒輪數控加工機床,可以加工多種齒制的螺旋錐齒輪,擴大了機床的
適用性;採用新型刀具材料、高速機床實現幹切削,既提高了加工效率和加工精度,也解決了綠色環保問題;採用在機檢測和計算機補償技術,提高機床加工精度;
機床上配置機械手,實現自動裝夾工件,提高工作效率,等等。

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 先進的曲軸加工生產線一般都比較短,但效率高、產量大,加工出的曲軸質量好且很穩定。如美國底特律
Ford發動機廠曲軸生產線只有17道工序,佔地面積6967m2,但年產V8發動機球鐵曲軸53.5萬
件。其先進技術主要體現在兩個方面:一是大量採用了CNC控制技術,形成柔性生產線;二是應用了許
多先進的高速、高效、柔性加工技術,簡化了工藝過程,提高了加工質量,同時也縮短了單件加工時間。另外,為適應降低成本等需要,近年來發動機曲軸加工採用
了很多特種工藝,相比之下,國內大多數生產線還存在較大差距。

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—、前言
 虞文華等學者通過對伺服系統動態特性對數控機床圓軌蹟的加工精度影響機理進行研究,認
為在不考慮機床自身的幾何精度的前提下,系統的輪廓跟踪誤差主要是由
伺服系統的動態特性和聯動軸之間的動態參數不匹配而引起。因此,為提高機床的輪廓加工精度,國內外 的專家和學者一般從以下三個方面著手:

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加工效率與精度是金屬加工領域追求的永恆目標。隨著數控技術、計算機技術、機床技術以及加工工藝技
術的不斷發展,傳統的加工理念已不能滿足人們對加工速度、效率和精度的要求。在這樣的背景下,複合加
工技術應運而生。一般來說,複合加工是指在一台加工設備上能夠完成不同工序或者不同工藝方法的加工 技術的總稱。目前的複合加工技術主要表現為2
種不同的類型,一種是以能量或運動方式為基礎的不同加工方法的複合;另一種是以工序集中原則為基礎的、以機械加工工藝為主的複合,車銑複合加工是近年來該
領域發展最為迅速的加工方式之一。

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Lutetium ( /l(j)uːˈtiːʃiəm/ lew-TEE-shee-əm) is a chemical element with the symbol Lu
and atomic number 71. It is in the d-block of the periodic table, not
the f-block, but the IUPAC classifies it as a lanthanide.[2] It is one
of the elements that traditionally were included in the classification,
"rare earths". One of its radioactive isotopes (176Lu) is used in
nuclear technology to determine the age of meteorites. Lutetium usually
occurs in association with the element yttrium and is sometimes used in
metal alloys and as a catalyst in various chemical reactions.


 


 


Contents


[hide]



  • 1 Characteristics

    • 1.1 Physical properties

    • 1.2 Chemical properties

    • 1.3 Compounds

    • 1.4 Isotopes



  • 2 History

  • 3 Occurrence and production

  • 4 Applications

  • 5 Precautions

  • 6 References

  • 7 External links


[edit] Characteristics


[edit] Physical properties


Lutetium
is a silvery white corrosion-resistant trivalent metal. It has the
smallest atomic radius and is the heaviest and hardest of the rare earth
elements.[3] Lutetium has the highest melting point of any lanthanide,
probably related to the lanthanide contraction.


[edit] Chemical properties


Lutetium metal tarnishes slowly in air and burns readily at 150 °C to form lutetium(III) oxide:


 


4 Lu + 3 O2 → 2 Lu2O3


Lutetium is quite electropositive and reacts slowly with cold water and quite quickly with hot water to form lutetium hydroxide:


 


2 Lu (s) + 6 H2O (l) → 2 Lu(OH)3 (aq) + 3 H2 (g)


Lutetium metal reacts with all the halogens to form halides:


 


2
Lu (s) + 3 F2 (g) → 2 LuF3 (s)2 Lu (s) + 3 Cl2 (g) → 2 LuCl3 (s)2 Lu
(s) + 3 Br2 (g) → 2 LuBr3 (s)2 Lu (s) + 3 I2 (g) → 2 LuI3 (s)


The fluoride, chloride, and bromide are white, whereas the iodide is brown.


Lutetium
dissolves readily in dilute sulfuric acid to form solutions containing
the colorless lutetium(III) ions, which exist as a [Lu(OH2)9]3+
complex:[4]


 


2 Lu (s) + 3 H2SO4 (aq) → 2 Lu3+ (aq) + 3 SO2–


4 (aq) + 3 H2 (g)


[edit] Compounds


 


See also Category: Lutetium compounds


In
all its compounds, lutetium occurs in +3 valence state. Aqueous
solutions of most Lu salts are colorless and form white crystalline
solids upon drying. The soluble salts, such as chloride (LuCl3), bromide
(LuBr3), iodide (LuI3), nitrate, sulfate and acetate form hydrates upon
crystallization. The oxide (Lu2O3), hydroxide, fluoride (LuF3),
carbonate, phosphate and oxalate are insoluble in water.[5]


Lutetium
tantalate (LuTaO4) is the densest known stable white material (density
9.81 g/cm3)[6] and therefore is an ideal host for X-ray phosphors.[7][8]
Thoria is more dense (10 g/cm3) and is also white, but radioactive.


[edit] Isotopes


Main article: isotopes of lutetium


Naturally
occurring lutetium is composed of 1 stable isotope 175Lu (97.41%
natural abundance) and 1 long-lived beta-radioactive isotope 176Lu with a
half-life of 3.78×1010 years (2.59% natural abundance). The last one is
used in radiometric dating (see Lutetium-hafnium dating). 33
radioisotopes have been characterized, with the most stable being
naturally occurring 176Lu, and artificial isotopes 174Lu with a
half-life of 3.31 years, and 173Lu with a half-life of 1.37 years. All
of the remaining radioactive isotopes have half-lives that are less
than 9 days, and the majority of these have half-lives that are less
than half an hour. This element also has 18 meta states, with the most
stable being 177mLu (T½=160.4 days), 174mLu (T½=142 days) and 178mLu (T½=23.1 minutes).


The
known isotopes of lutetium range in atomic weight from 149.973 (150Lu)
to 183.961 (184Lu). The primary decay mode before the most abundant
stable isotope, 175Lu, is electron capture (with some alpha and positron
emission), and the primary mode after is beta emission. The primary
decay products before 175Lu are element 70 (ytterbium) isotopes and the
primary products after are element 72 (hafnium) isotopes.


[edit] History


Lutetium (Latin: Lutetia
meaning Paris) was independently discovered in 1907 by French scientist
Georges Urbain,[9] Austrian mineralogist Baron Carl Auer von Welsbach,
and American chemist Charles James.[10] All of these men found lutetium
as an impurity in the mineral ytterbia which was thought by Swiss
chemist Jean Charles Galissard de Marignac (and most others) to consist
entirely of the element ytterbium.


The separation of lutetium from
Marignac's ytterbium was first described by Urbain and the naming
honor therefore went to him. He chose the names neoytterbium (new
ytterbium) and lutecium for the new element but neoytterbium was
eventually reverted back to ytterbium and in 1949 the spelling of
element 71 was changed to lutetium.


The dispute on the priority of
the discovery is documented in two articles in which Urbain and von
Welsbach accuse each other of publishing results influenced by the
published research of the other.[11][12]


The Commission on Atomic
Mass, which was responsible for the attribution of the names for the
new elements, settled the dispute in 1909 by granting priority to
Urbain and adopting his names as official ones. An obvious problem with
this decision was that Urbain was one of the four members of the
commission.[13]


Welsbach proposed the names cassiopeium
for element 71 (after the constellation Cassiopeia) and aldebaranium
for the new name of ytterbium but these naming proposals were rejected
(although many German scientists in the 1950s called the element 71
cassiopium).


Ironically, Charles James, who had modestly stayed
out of the argument as to priority, worked on a much larger scale than
the others, and undoubtedly possessed the largest supply of lutetium at
the time.[14]


[edit] Occurrence and production


 


 


 


 


Monazite


Found
with almost all other rare-earth metals but never by itself, lutetium
is very difficult to separate from other elements. The principal
commercially viable ore of lutetium is the rare earth phosphate mineral
monazite: (Ce, La, etc.) PO4 which contains 0.003% of the element. The
abundance of lutetium in the Earth crust is only about 0.5 mg/kg. The
main mining areas are China, United States, Brazil, India, Sri Lanka and
Australia. The world production of lutetium (in the form of oxide) is
about 10 tonnes per year.[14] Pure lutetium metal has only relatively
recently been isolated and is very difficult to prepare. It is one of
the rarest and most expensive of the rare earth metals with the price
about US$ 10,000 per kg, or about one-fourth that of Gold.[15][16]


Crushed
minerals are treated with hot concentrated sulfuric acid to produce
water-soluble sulfates of rare earths. Thorium precipitates out of
solution as hydroxide and is removed. After that the solution is
treated with ammonium oxalate to convert rare earths in to their
insoluble oxalates. The oxalates are converted to oxides by annealing.
The oxides are dissolved in nitric acid that excludes one of the main
components, cerium, whose oxide is insoluble in HNO3. Several rare
earth metals, including Lu, are separated as a double salt with
ammonium nitrate by crystallization. Lutetium is separated by ion
exchange. In this process, rare-earth ions are sorbed onto suitable
ion-exchange resin by exchange with hydrogen, ammonium or cupric ions
present in the resin. Lutetium salts are then selectively washed out by
suitable complexing agent. Lutetium metal is then obtained by
reduction of anhydrous LuCl3 or LuF3 by either an alkali metal or
alkaline earth metal.[5]


 


2 LuCl3 + 3 Ca → 2 Lu + 3 CaCl2


[edit] Applications


Because
of the rarity and high price, lutetium has very few commercial uses.
However, stable lutetium can be used as catalysts in petroleum cracking
in refineries and can also be used in alkylation, hydrogenation, and
polymerization applications.


Some other applications include:



  • Lutetium-176 (176Lu) has been used to date the age of meteorites.[17]

  • Lutetium
    aluminium garnet (Al5Lu3O12) has been proposed for use as a lens
    material in high refractive index immersion lithography.[18]

  • Lutetium-177
    (177Lu), when bound to Octreotate (a somatostatin analogue), is used
    experimentally in targeted radionuclide therapy for neuroendocrine
    tumors.[19]

  • Cerium-doped lutetium oxyorthosilicate (LSO) is
    currently the preferred compound for detectors in positron emission
    tomography (PET.) [20][21]

  • Use as a pure beta emitter, using lutetium which has been exposed to neutron activation.

  • A
    tiny amount of lutetium is added as a dopant to gadolinium gallium
    garnet (GGG), which is used in magnetic bubble memory devices.[22]


[edit] Precautions


Like
other rare-earth metals, lutetium is regarded as having a low degree
of toxicity, but its compounds should be handled with care nonetheless.
Metal dust of this element is a fire and explosion hazard. Lutetium
plays no biological role in the human body.


引用出處: 


 http://en.wikipedia.org/wiki/Lutetium


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