Bewise Inc.
轉述
A.微觀結構
(c)C+/TiN (TiN 植入 C+ )
CAE製程前於界面植入適當劑量有助於後續鍍膜成長之緻密性。
表面活化dislocation density增加提昇nucleation sites 。
磨耗壽命量測
離子束濺鍍沉積應用於超大型
積體電路之銅製程研究
(NSC90-2626-E-167-001)
離子束濺鍍沉積法(IBSD)的工作原理是將氬氣(Ar)離子化後施加電壓使其加速轟擊銅靶,在氬離子撞擊銅靶之前,會先通過中和絲極使表面電荷被中和。銅靶被氬離子以斜角撞擊後,被擊出的銅原子會飛出而沉積在基材上。
表面濺射原理示意圖
離子束濺鍍沉積參數
離子束濺鍍沉積主要控制參數有離子束電流、離子束電壓、沉積速率、沉積時間。固定工作壓力為3.4*10-4 torr,調變其中一項參數值,比較不同參數條件下對晶種層的影響。
碧威股份有限公司www.tool-tool.com
國立勤益技術大學機械系
教授:張子欽博士
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