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Bewise Inc.

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轉述

MEVVA源結構

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MEVVA離子源細部結構示意圖

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大尺寸引出電極可獲得寬離子束

植入元素與改質效果

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:植入劑量
E: 加數電壓
: 摩擦係數
: 磨耗率=W1/W2 W1:未植入工件重量損失 W2:植入後工件重量損失

MEVVA離子源結合PVD混合系統之發展
系統特性
工 作原理:利用陰極電弧沉積法(Cathodic Arc Evaporation )之高沉積速率與高離化率之特性，再輔以MEVVA源之離子混合(Ion mixing)效果與準確的植入劑量控制改善界面與表面性質進而製備出更具環境適應性之新一代鍍膜。此混合系統已於永源科技組裝完成， 包括一組MEVVA源與改良式陰極電弧源。
特點: 被覆前後藉由MEVVA離子源一定劑量之植入具有活化表面性質與相變化之結果進而顯著提昇鍍膜品質。

碧威股份有限公司www.tool-tool.com
國立勤益技術大學機械系
教授：張子欽博士

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